FQPF33N10L mosfet equivalent, n-channel mosfet.
* 18 A, 100 V, RDS(on) = 52 mΩ (Max.) @ VGS = 10 V, ID = 9 A
* Low Gate Charge (Typ. 30 nC)
* Low Crss (Typ. 70 pF)
* 100% Avalanche Tested
* 175°C Ma.
November 2013
Features
* 18 A, 100 V, RDS(on) = 52 mΩ (Max.) @ VGS = 10 V, ID = 9 A
* Low Gate Charge (Typ. 30.
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superio.
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