FQPF33N10L
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
November 2013
Features
- 18 A, 100 V, RDS(on) = 52 mΩ (Max.) @ VGS = 10 V, ID = 9 A
- Low Gate Charge (Typ. 30 n C)
- Low Crss (Typ. 70 p F)
- 100% Avalanche Tested
- 175°C Maximum Junction Temperature Rating
TO-220F
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current
- Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche...
